Methods to reduce microbridge defects in EUV patterning for microelectronic workpieces

ABSTRACT

Embodiments reduce or eliminate microbridge defects in extreme ultraviolet (EUV) patterning for microelectronic workpieces. A patterned layer is formed over a multilayer structure using an EUV patterning process. Protective material is then deposited over the patterned layer using one or more oblique deposition processes. One or more material bridges extending between line patterns within the patterned layer are then removed while using the protective material to protect the line patterns. As such, microbridge defects caused in prior solutions are reduced or eliminated. For one embodiment, the oblique deposition processes include physical vapor deposition (PVD) processes that apply the same or different protective materials in multiple directions with respect to line patterns within the patterned layer. For one embodiment, the removing includes one or more plasma trim processes. Variations can be implemented.

BACKGROUND

The present disclosure relates to methods for the manufacture ofmicroelectronic workpieces including the formation of patternedstructures on microelectronic workpieces.

Device formation within microelectronic workpieces typically involves aseries of manufacturing techniques related to the formation, patterning,and removal of layers of material on a substrate. To meet the physicaland electrical specifications of current and next generationsemiconductor devices, process flows are being requested to reducefeature size while maintaining structure integrity for variouspatterning processes.

To achieve reduced feature sizes, patterning using extreme ultraviolet(EUV) lithography has been introduced in processing systems, and thisEUV lithography typically uses light having a wavelength from 6 to 16nanometers (nm) or below. For example, EUV patterning techniques havebeen introduced into production at sub-7 nm node advanced semiconductordevice manufacturing. Although reduced feature sizes are achieved,pattern performance problems have occurred in EUV patterning. Withrespect to line and space patterns, for example, microbridge defectshave occurred in resulting EUV patterns, and these microbridge defectsare typically uncorrectable and cause fatal device failures. Forexample, due to stochastic failure issues, microbridge defects aresignificant problems for patterning of lines/spaces below a 36 nm pitch.Further, there is often a trade-off in EUV lithography betweeneliminating microbridge defects and causing broken line defects, whichare also undesirable defects that typically cause fatal device failures.

FIG. 1A (Prior Art) is an example embodiment of a cross-section view 100after a patterned layer 110 has been formed over a multilayer structureusing an EUV patterning process. For the example embodiment shown, themultilayer structure includes a hardmask layer 104, a protective layer106, and an anti-reflective coating (ARC) layer 108 formed over anunderlying layer 102. The underlying layer 102 can be a substrate for amicroelectronic workpiece, such as a semiconductor substrate and/oranother substrate material or combination of materials. The hardmasklayer 104 can be SiN and/or other hardmask material or combination ofmaterials. The protective layer 106 can be a spin-on-carbon (SOC) layerof amorphous carbon, a planarization layer (e.g. organic planarizationlayer), and/or another planarization or protective material orcombination of materials. The ARC layer 108 can be a chemical vapordeposition (CVD) material, a silicon-based spin-on-glass (SOG) layer,and/or another ARC material or combination of materials. The patternedlayer 110 can be one or more photoresist materials or combination ofphotoresist materials that are suitable for use in EUV lithography. Thepatterned layer can also be a chemically amplified resist (CAR)material, a non-CAR material, a metal oxide resist (MOR) material suchas SnOx, ZrO or HfO, and/or other suitable materials. It is assumed thatthe pattern formed by the patterned layer 110 includes lines and spacesbetween those lines. Unwanted material of the patterned layer 110 oftenremain after EUV patterning. For the example shown, such unwantedmaterial extends between two adjacent lines and forms a material bridge112.

FIG. 1B (Prior Art) is an example embodiment of a cross-section view 120after the pattern of the patterned layer 110 in FIG. 1A (Prior Art) hasbeen transferred to underlying layers using one or more etch processes.The etch processes can be implemented, for example, as one or moreplasma etch process steps, although other etch processes could also beused. For the example embodiment shown, the line/space pattern has beentransferred from the patterned layer 110 in FIG. 1A (Prior Art) to thehardmask layer 104. However, the material bridge 112 has also beentransferred to the hardmask layer 104 to form a material bridge 122 ofthe hardmask material that extends between two adjacent lines within thepatterned hardmask layer 104.

FIG. 1C (Prior Art) is an example embodiment of a top-view 130 of linepatterns showing the material bridge 122 formed between two adjacentlines. This material bridge 122 causes a microbridge defect. Asindicated above, such microbridge defects are typically uncorrectableand cause fatal device failures in resulting devices formed in themicroelectronic workpieces being processed.

SUMMARY

Embodiments are described herein that reduce or eliminate microbridgedefects in EUV patterning for microelectronic workpieces. A patternedlayer is formed over a multilayer structure using an EUV patterningprocess. Protective material is then deposited over the patterned layerusing one or more oblique deposition processes. One or more materialbridges extending between line patterns within the patterned layer arethen removed while using the protective material to protect the linepatterns. As such, microbridge defects caused in prior solutions arereduced or eliminated. For one embodiment, the oblique depositionprocesses include physical vapor deposition (PVD) processes that applythe same or different protective materials in multiple directions withrespect to line patterns within the patterned layer. For one embodiment,the removing includes one or more plasma trim processes. Different oradditional features, variations, and embodiments can also beimplemented, and related systems and methods can be utilized as well.

For one embodiment, a method for extreme ultraviolet processing of amicroelectronic workpiece is disclosed including forming a patternedlayer over a multilayer structure using an extreme ultraviolet (EUV)patterning process, depositing protective material over the patternedlayer using one or more oblique deposition processes applied in two ormore directions, and removing one or more material bridges extendingbetween line patterns within the patterned layer while using theprotective material to protect the line patterns.

In additional embodiments, the protective material has a thicknessgreater than or equal to 0.1 nanometers and less than or equal to 5.0nanometers. In further additional embodiments, the removing includes oneor more etch processes. In further embodiments, the one or more etchprocesses include one or more plasma trim processes.

In additional embodiments, the depositing includes a first obliquedeposition process in a first direction to deposit a first protectivematerial and a second oblique deposition process in a second directionto deposit a second protective material. In further embodiments, thefirst protective material and the second protective material are a samematerial. In further embodiments, the first protective material and thesecond protective material are different materials from each other orinclude combinations of materials. In further embodiments, the firstprotective material and the second protective material each includes atleast one of an organic material, oxide, nitride, carbon, silicon, SiO,SiN, SiON, Sn, SnO, Ti, TiO, TiN, Ta, TaN, Al, AlO, Zr, ZrO Hf, HfO, W,or WC.

In additional embodiments, the one or more oblique deposition processesinclude one or more oblique physical vapor deposition (PVD) processes.In further embodiments, the one or more oblique PVD processes apply theprotective material at angles of incidence of 10 to 80 degrees withrespect to a horizontal surface of a next underlying layer. In furtherembodiments, the one or more oblique PVD processes are used to depositprotective material simultaneously in two different directions.

In additional embodiments, a first set of oblique PVD processes is usedto deposit protective material in a first direction using one or moreangles, and a second set of oblique PVD processes using one or moreangles is used to deposit protective material in a second direction. Infurther embodiments, oblique PVD processes from the first set arealternated with oblique PVD processes from the second set.

In additional embodiments, a plurality of oblique PVD processes are usedhaving a same process chemistry or different process chemistries. Infurther additional embodiments, a plurality of oblique PVD processes areusing having a same target material or different target materials.

In additional embodiments, the one or more material bridges have heightslower than heights for the line patterns within the patterned layer. Infurther embodiments, the heights of the one or more material bridgesabove a surface of a next underlying layer upon which the patternedlayer is formed is greater than zero and is less than or equal toninety-five percent of the heights for the line patterns above the nextunderlying layer.

In additional embodiments, the method includes transferring a pattern ofthe patterned layer to at least one underlying layer within themultilayer structure. In further embodiments, the multilayer structureincludes a hardmask layer formed over a substrate for themicroelectronic workpiece, and the pattern is transferred to thehardmask layer. In further embodiments, the method includes performingone or more etch processes to remove the protective material before thetransferring.

In additional embodiments, the EUV patterning process includes formingan EUV photoresist layer, exposing the EUV photoresist layer with apattern using EUV light, and removing unexposed portions of the EUVphotoresist layer to form the patterned layer. In further embodiments,the EUV photoresist layer includes at least one of a chemicallyamplified resist (CAR) material, a non-CAR material, a metal oxideresist (MOR) material, or combination of materials. In furtherembodiments, the EUV light has a wavelength from 6 to 16 nanometers.

In additional embodiments, the multilayer structure includes ananti-reflective coating (ARC) layer, a protective layer, and a hardmasklayer formed over a substrate for the microelectronic workpiece.

Different or additional features, variations, and embodiments can alsobe implemented, and related systems and methods can be utilized as well.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete understanding of the present inventions and advantagesthereof may be acquired by referring to the following description takenin conjunction with the accompanying drawings, in which like referencenumbers indicate like features. It is to be noted, however, that theaccompanying drawings illustrate only exemplary embodiments of thedisclosed concepts and are therefore not to be considered limiting ofthe scope, for the disclosed concepts may admit to other equallyeffective embodiments.

FIGS. 1A-1C (Prior Art) provide example embodiments for a conventionalEUV patterning process where microbridge defects result from the EUVpatterning.

FIGS. 2A-2C provide example embodiments after a patterned layer has beenformed over a multilayer structure using an EUV patterning process.

FIGS. 3A-3C provide example embodiments after a first oblique depositionprocess in a first direction has been used to deposit protectivematerial onto the patterned layer shown in FIGS. 2A-2C.

FIGS. 4A-4C provide example embodiments after a second obliquedeposition process in a second direction has been used to depositprotective material onto the patterned layer shown in FIGS. 3A-3C.

FIGS. 5A-C provide example embodiments after one or more etch processeshave been performed to remove material bridges shown in FIGS. 4A-4C.

FIG. 6 is an example embodiment after one or more etch processes havebeen applied to remove the protective material from the structures shownin FIG. 5C.

FIG. 7 is an example embodiment after the pattern of the patterned layerin FIG. 6 has been transferred to underlying layers using one or moreetch processes.

FIG. 8 is a process flow diagram of an example embodiment to applyoblique deposition techniques to EUV patterning processes formicroelectronic workpieces as described herein.

DETAILED DESCRIPTION

Methods are disclosed to reduce or eliminate microbridge defects in EUVpatterning for microelectronic workpieces. As described herein, obliquedeposition processes, such as oblique physical vapor deposition (PVD)processes, apply material that protects patterned layers includingsidewalls and corners of line patterns. For one embodiment, oblique PVDprocesses are applied to lines within patterned photoresist layers suchthat material bridges between the lines will not receive depositedmaterial from the oblique PVD. The material bridges are then removed,for example, using a plasma trim process. When the resulting pattern istransferred to underlying layers, no transfer of the material bridgesoccurs becomes these material bridges have previously been removed. Assuch, microbridge defects are reduced or eliminated without damaging theline patterns. Other advantages and implementations can also be achievedwhile still taking advantage of the process techniques described herein.

FIGS. 2A-2C provide example embodiments after a patterned layer 110 hasbeen formed over a multilayer structure using an EUV patterning process.As indicated above, EUV lithography can be used to form the patternedlayer 110. For example, an EUV photoresist layer can be formed and thenexposed to a pattern using EUV light. Unexposed portions of the EUVphotoresist layer can then be removed to form the patterned layer 110,for example, using one or more photoresist etch processes.

Looking first to FIG. 2A, an example embodiment of a top view 200 isshown including the patterned layer 110. The patterned layer 110includes line patterns and adjacent spaces. The underlying ARC layer 108can be seen through the adjacent spaces. A material bridge 112 extendsbetween two of the lines within the patterned layer 110. Line A-A 202and line B-B 204 represent locations of the cross-section views in FIG.2B and FIG. 2C, respectively.

FIG. 2B is an example embodiment of a cross-section view 210 through theline A-A 202 shown in FIG. 2A. For the example embodiment shown, themultilayer structure includes a hardmask layer 104, a protective layer106, and an ARC layer 108 formed over an underlying layer 102. Theunderlying layer 102 can be a substrate for a microelectronic workpiece,such as a semiconductor substrate and/or another substrate material orcombination of materials. The hardmask layer 104 can be SiN and/or otherhardmask material or combination of materials. The protective layer 106can be a spin-on-carbon (SOC) layer of amorphous carbon, a planarizationlayer (e.g. organic planarization layer), and/or another planarizationor protective material or combination of materials. The ARC layer 108can be a chemical vapor deposition (CVD) material, a silicon-basedspin-on-glass (SOG) layer, and/or another ARC material or combination ofmaterials. The patterned layer 110 can be one or more photoresistmaterials or combination of photoresist materials that are suitable foruse in EUV lithography. The patterned layer can also be a chemicallyamplified resist (CAR) material, a non-CAR material, a metal oxideresist (MOR) material such as SnOx, ZrO or HfO, and/or other suitablematerials. As shown in FIG. 2A, the pattern formed by the patternedlayer 110 includes lines and spaces between those lines.

FIG. 2C is an example embodiment of a cross-section view 220 through theline B-B 204 shown in FIG. 2A. This cross-section view 220 is similar tocross-section view 100 in FIG. 1A (Prior Art). As shown, unwantedmaterial of the patterned layer 110 extends between two adjacent linesand forms an undesired material bridge 112. For example, such materialbridges are often formed by scum left after the patterning of thepatterned layer 110. Typically, the material bridge 112 has a heightthat is lower than a height for the line patterns within the patternedlayer 110. For one example embodiment, the height (H_(BRDG)) of thematerial bridge 112 above the surface of the next underlying layer uponwhich the patterned layer 110 is formed (e.g., the ARC layer 108 in FIG.2C) is greater than zero and is less than or equal to ninety-fivepercent of the height (H_(PTRN)) that the patterned layer 110 extendsabove the next underlying layer, such that 0<H_(BRDG)≤(0.95)*H_(PTRN).It is noted that the height of the material bridge 112 can varydepending upon the patterns formed in the patterned layer 110 and/orother process parameters.

FIGS. 3A-3C provide example embodiments after a first oblique depositionprocess in a first direction 302 has been used to deposit protectivematerial 304 onto the patterned layer 110, which can include linepatterns formed within the patterned layer 110. The protective material304 can be, for example, oxide, nitride, and/or other protectivematerial although different and/or additional materials can also beused. For example, the protective material 304 can also be a silicon(Si) containing material such as Si, SiO, SiN, and/or SiON; a metalcontaining material such as Sn, SnO, Ti, TiO, TiN, Ta, TaN, Al, AlO, Zr,ZrO Hf, HfO, W, and/or WC; an organic material such as carbon (C);and/or another suitable material or combination of materials. It isfurther noted that one or more deposition process steps can be used forthe first oblique deposition process to deposit the protective material304. For one example embodiment, the thickness (T) of the protectivematerial 304 is greater than or equal to 0.1 nm and less than or equalto 5.0 nm, such that 0.1 nm≤T≤5.0 nm. It is noted that other thicknessescould also be used depending upon the patterns formed within thepatterned layer 110. It is further noted that the thickness and materialused for the protective material 304 can be designed to have enoughselectivity to protect the patterns within the patterned layer 110 fromerosion during removal of the undesired material bridges 112, and thisselection of thickness and material can be independent from the patternsformed within the patterned layer 110 and/or underlying structures.

FIG. 3A is an example embodiment of a top view 300 of the structures inFIG. 2A after material 304 that has been deposited by the first obliquedeposition process in a first direction 302. As shown, the protectivematerial 304 is deposited on the sidewalls and corners of the patternedlayer 110 exposed to the first direction 302 for the first obliquedeposition process. Only a small portion 306 of the protective materialis deposited on top of the material bridge 112. Line A-A 202 and lineB-B 204 represent locations of the cross-section views in FIG. 3B andFIG. 3C, respectively.

FIG. 3B is an example embodiment of a cross-section view 310 through theline A-A 202 shown in FIG. 3A. As indicated above, the first obliquedeposition process in a first direction 302 has deposited protectivematerial 304 on the sidewalls and corners of the patterned layer 110exposed to direction 302 for this first oblique deposition process.

FIG. 3C is an example embodiment of a cross-section view 320 through theline B-B 204 shown in FIG. 3A. As indicated above, the first obliquedeposition process in a first direction 302 has deposited protectivematerial 304 on the sidewalls and corners of the patterned layer 110exposed to the first direction 302 the first oblique deposition process.As also indicated above, only a small portion 306 of the protectivematerial is deposited on top of the material bridge 112.

FIGS. 4A-4C provide example embodiments after a second obliquedeposition process in a second direction 402 has been used to depositprotective material 404 onto the patterned layer 110, which can includeline patterns formed within the patterned layer 110. The protectivematerial 404 can be, for example, oxide, nitride, and/or otherprotective material although different and/or additional materials canalso be used. For example, the protective material 404 can also be asilicon (Si) containing material such as Si, SiO, SiN, and/or SiON; ametal containing material such as Sn, SnO, Ti, TiO, TiN, Ta, TaN, Al,AlO, Zr, ZrO Hf, HfO, W, and/or WC; an organic material such as carbon(C); and/or another suitable material or combination of materials. It isfurther noted that one or more deposition process steps can be used forthe second oblique deposition process to deposit the protective material404. For one example embodiment, the thickness (T) of the protectivematerial 404 is greater than or equal to 0.1 nm and less than or equalto 5.0 nm, such that 0.1 nm≤T≤5.0 nm. It is noted that other thicknessescould also be used depending upon the patterns formed within thepatterned layer 110. It is further noted that the thickness and materialused for the protective material 404 can be designed to have enoughselectivity to protect the patterns within the patterned layer 110 fromerosion during removal of the undesired material bridges 112, and thisselection of thickness and material can be independent from the patternsformed within the patterned layer 110 and/or underlying structures.

In addition, the material used for the protective material 404 can bethe same or different from the material used for protective material304, although it is preferably the same material. It is further notedthat the protective material 304 and/or the protective material 404 canbe a combination of materials that are deposited using multiple obliquedeposition processes. For example, the protective material 304 can be acombination of materials formed by multiple oblique deposition processesusing different process chemistries. Similarly, the protective material404 can be a combination of materials formed by multiple obliquedeposition processes using different process chemistries. Othervariations can also be implemented.

FIG. 4A is an example embodiment of a top view 400 of the structures inFIG. 3A after protective material 404 that has been deposited by thesecond oblique deposition process in a second direction 402. As shown,the protective material 404 is deposited on the sidewalls and corners ofthe patterned layer 110 exposed to the second direction 402 for thesecond oblique deposition process. Only a small portion 406 of theprotective material is deposited on top of the material bridge 112. LineA-A 202 and line B-B 204 represent locations of the cross-section viewsin FIG. 4B and FIG. 4C, respectively.

FIG. 4B is an example embodiment of a cross-section view 410 through theline A-A 202 shown in FIG. 4A. As indicated above, the second obliquedeposition process in a second direction 402 has deposited protectivematerial 404 on the sidewalls and corners of the patterned layer 110exposed to the second direction 402 for the second oblique depositionprocess.

FIG. 4C is an example embodiment of a cross-section view 420 through theline B-B 204 shown in FIG. 4A. As indicated above, the second obliquedeposition process in a second direction 402 has deposited protectivematerial 404 on the sidewalls and corners of the patterned layer 110exposed to the second direction 402 for second oblique depositionprocess. As also indicated above, only a small portion 406 of theprotective material is deposited on top of the material bridge 112.

It is again noted that the protective material 404 can be the samematerial as the protective material 304, although different materialscould also be used. Further, the oblique deposition processes used toform the protective material 304/404 can be implemented using the sameprocess chemistry or using different process chemistries. It is furthernoted that the protective material 304/404 is shown as being depositedat different times. However, it is understood that the protectivematerial 304/404 can be deposited at the same time or can be depositedusing multiple oblique deposition processes that alternate directions.For example, a first set of oblique deposition processes can be used todeposit the protective material 304 using a first angle or set ofangles, and this first set can be alternated with a second set ofoblique deposition processes used to deposit the protective material 404using a second angle or set of angles. Other variations could also beimplemented.

For one example embodiment, one or more oblique PVD processes are usedfor the oblique deposition processes to deposit the protective material304 shown in FIGS. 3A-3C and to deposit the protective material 404shown in FIGS. 4A-4C. For one example embodiment, the oblique PVDprocesses can deposit the protective material 304/404 at an angle ofincidence of 10 to 80 degrees (e.g., 10 degrees≤angle of incidence≤80degrees), and preferably 45 degrees, with respect a horizontal surfaceof the next underlying layer. It is further noted that because a firstdirection 302 is used to deposit protective material 304 and a seconddirection 402 is used to deposit the protective material 404, the firstdirection 302 can be considered from 10 to 80 degree while the seconddirection 402 can be considered from 100 to 170 degrees, although theangle of incidence can still be considered from 10 to 80 degrees. Inaddition, multiple different angles can be used for the obliquedeposition processes. For example, multiple different oblique depositionprocesses can be used with different angles, and/or multiple differentangles can be used within a single oblique deposition process tocontinuously deposit material with moving angles. Other variations couldalso be implemented.

Although separate oblique PVD processes are shown with respect to FIGS.3A-3C and FIGS. 4A-4C, it is noted that one or more oblique PVDprocesses could also be used to apply the protective material 304/404simultaneously in two or more different directions. Further, asindicated above, oblique PVD processes can be used that alternatedirections to build the protective material 304/404 over multipleprocess cycles. In addition, the oblique PVD processes can beimplemented using the same process chemistry or using different processchemistries. Still further, the target material of the obliquedeposition processes used to form the protective material 304/404 canalso be the same material or different materials. Still further, otheroblique deposition processes could also be used instead of or inaddition to one or more oblique PVD processes. Other variations can alsobe implemented while still taking advantage of the techniques describedherein.

FIGS. 5A-5C provide example embodiments after one or more etch processeshave been performed to remove material bridge 112. The etch processescan include one or more plasma trim processes, although additionaland/or different etch processes could also be used to remove materialbridge 112 and/or other material bridges extending between lines withinthe line patterns formed within the patterned layer 110.

FIG. 5A is an example embodiment of a top view 500 of the structures inFIG. 4A after the material bridge 112 that has removed, for example,using a plasma trim process. As shown, the protective material 304 andthe protective material 404 remain after the removal of the materialbridge 112. The portions 306/406 of the protective material deposited ontop of the material bridge 112 also remain. Line A-A 202 and line B-B204 represent locations of the cross-section views in FIG. 5B and FIG.5C, respectively.

FIG. 5B is an example embodiment of a cross-section view 510 through theline A-A 202 shown in FIG. 5A. As indicated above, any material bridgesare removed, and the deposited protective material 304/404 remain on thesidewalls and corners of the patterned layer 110.

FIG. 5C is an example embodiment of a cross-section view 520 through theline B-B 204 shown in FIG. 5A. As indicated above, the material bridge112 has been removed, and the deposited protective material 304/404remain on the sidewalls and corners of the patterned layer 110. As alsoindicated above, the portions 306/406 of the protective materialdeposited on top of the material bridge 112 also remain after removal ofthe material bridge 112.

FIG. 6 is an example embodiment of a cross-section view 600 after one ormore etch processes have been applied to remove the protective material304/404 from the structures shown in FIG. 5C. Because the materialbridge 112 was already removed as shown in FIGS. 5A-5C, the desiredpatterns, such as line patterns and adjacent spaces, remain within thepatterned layer 110 after removal of the protective material 304/404.

FIG. 7 is an example embodiment of a cross-section view 700 after thepattern of the patterned layer 110 in FIG. 6 has been transferred tounderlying layers using one or more etch processes. As indicated above,the pattern can include line patterns with adjacent space, althoughother patterns could also be included. The etch processes can beimplemented, for example, as one or more plasma etch process steps,although other etch processes could also be used. For the exampleembodiment shown, the pattern has been transferred to the hardmask layer104. In contrast with FIG. 1B (Prior Art), the material bridge 112 isnot transferred to the hardmask layer 104 because it was previouslyremoved as shown in FIGS. 5A-5C. The desired patterns, such as linepatterns and adjacent spaces, remain within the hardmask layer 104. Assuch, the microbridge defects caused with prior solutions are reduced oreliminated by the oblique deposition techniques described herein.

FIG. 8 is a process flow diagram 800 of an example embodiment for EUVprocessing of microelectronic workpieces while reducing or eliminatemicrobridge defects caused by prior solutions. In block 802, a patternedlayer is formed over a multilayer structure using an extreme ultraviolet(EUV) patterning process. In block 804, protective material is depositedover the patterned layer using one or more oblique deposition processes.For example, the one or more oblique deposition processes can be appliedin two or more directions to deposit the protective material. For oneembodiment, the one or more oblique deposition processes includes one ormore PVD processes that apply the same or different protective materialsin multiple directions with respect to the line patterns within thepatterned layer. In block 806, one or more material bridges extendingbetween line patterns within the patterned layer are removed while usingthe protective material to protect the line patterns. For oneembodiment, the removing includes one or more plasma trim processes. Itis noted that additional or different process steps can also be usedwhile still taking advantage of the techniques described herein.

It is noted that one or more deposition processes can be used to formthe material layers described herein. For example, one or moredepositions can be implemented using chemical vapor deposition (CVD),plasma enhanced CVD (PECVD), physical vapor deposition (PVD), atomiclayer deposition (ALD), and/or other deposition processes. For a plasmadeposition process, a precursor gas mixture can be used including butnot limited to hydrocarbons, fluorocarbons, or nitrogen containinghydrocarbons in combination with one or more dilution gases (e.g.,argon, nitrogen, etc.) at a variety of pressure, power, flow andtemperature conditions. Lithography processes with respect to PR layerscan be implemented using optical lithography, extreme ultraviolet (EUV)lithography, and/or other lithography processes. The etch processes canbe implemented using plasma etch processes, discharge etch processes,and/or other desired etch processes. For example, plasma etch processescan be implemented using plasma containing fluorocarbons, oxygen,nitrogen, hydrogen, argon, and/or other gases. In addition, operatingvariables for process steps can be controlled to ensure that criticaldimension (CD) target parameters for vias are achieved during viaformation. The operating variables may include, for example, the chambertemperature, chamber pressure, flowrates of gases, frequency and/orpower applied to electrode assembly in the generation of plasma, and/orother operating variables for the processing steps. Variations can alsobe implemented while still taking advantage of the techniques describedherein.

It is noted that reference throughout this specification to “oneembodiment” or “an embodiment” means that a particular feature,structure, material, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention, butdo not denote that they are present in every embodiment. Thus, theappearances of the phrases “in one embodiment” or “in an embodiment” invarious places throughout this specification are not necessarilyreferring to the same embodiment of the invention. Furthermore, theparticular features, structures, materials, or characteristics may becombined in any suitable manner in one or more embodiments. Variousadditional layers and/or structures may be included and/or describedfeatures may be omitted in other embodiments.

“Microelectronic workpiece” as used herein generically refers to theobject being processed in accordance with the invention. Themicroelectronic workpiece may include any material portion or structureof a device, particularly a semiconductor or other electronics device,and may, for example, be a base substrate structure, such as asemiconductor substrate or a layer on or overlying a base substratestructure such as a thin film. Thus, workpiece is not intended to belimited to any particular base structure, underlying layer or overlyinglayer, patterned or unpatterned, but rather, is contemplated to includeany such layer or base structure, and any combination of layers and/orbase structures. The description below may reference particular types ofsubstrates, but this is for illustrative purposes only and notlimitation.

The term “substrate” as used herein means and includes a base materialor construction upon which materials are formed. It will be appreciatedthat the substrate may include a single material, a plurality of layersof different materials, a layer or layers having regions of differentmaterials or different structures in them, etc. These materials mayinclude semiconductors, insulators, conductors, or combinations thereof.For example, the substrate may be a semiconductor substrate, a basesemiconductor layer on a supporting structure, a metal electrode or asemiconductor substrate having one or more layers, structures or regionsformed thereon. The substrate may be a conventional silicon substrate orother bulk substrate including a layer of semi-conductive material. Asused herein, the term “bulk substrate” means and includes not onlysilicon wafers, but also silicon-on-insulator (“SOI”) substrates, suchas silicon-on-sapphire (“SOS”) substrates and silicon-on-glass (“SOG”)substrates, epitaxial layers of silicon on a base semiconductorfoundation, and other semiconductor or optoelectronic materials, such assilicon-germanium, germanium, gallium arsenide, gallium nitride, andindium phosphide. The substrate may be doped or undoped.

Systems and methods for processing a microelectronic workpiece aredescribed in various embodiments. One skilled in the relevant art willrecognize that the various embodiments may be practiced without one ormore of the specific details, or with other replacement and/oradditional methods, materials, or components. In other instances,well-known structures, materials, or operations are not shown ordescribed in detail to avoid obscuring aspects of various embodiments ofthe invention. Similarly, for purposes of explanation, specific numbers,materials, and configurations are set forth in order to provide athorough understanding of the invention. Nevertheless, the invention maybe practiced without specific details. Furthermore, it is understoodthat the various embodiments shown in the figures are illustrativerepresentations and are not necessarily drawn to scale.

Further modifications and alternative embodiments of the describedsystems and methods will be apparent to those skilled in the art in viewof this description. It will be recognized, therefore, that thedescribed systems and methods are not limited by these examplearrangements. It is to be understood that the forms of the systems andmethods herein shown and described are to be taken as exampleembodiments. Various changes may be made in the implementations. Thus,although the inventions are described herein with reference to specificembodiments, various modifications and changes can be made withoutdeparting from the scope of the present inventions. Accordingly, thespecification and figures are to be regarded in an illustrative ratherthan a restrictive sense, and such modifications are intended to beincluded within the scope of the present inventions. Further, anybenefits, advantages, or solutions to problems that are described hereinwith regard to specific embodiments are not intended to be construed asa critical, required, or essential feature or element of any or all theclaims.

What is claimed is:
 1. A method for extreme ultraviolet processing of amicroelectronic workpiece, comprising: forming a patterned layer over amultilayer structure using an extreme ultraviolet (EUV) patterningprocess, the patterned layer including line patterns and one or morematerial bridges extending between line patterns; depositing protectivematerial over the line patterns of the patterned layer using one or moreoblique deposition processes applied in two or more directions; andremoving the one or more material bridges extending between the linepatterns within the patterned layer using the protective material toprotect the line patterns.
 2. The method of claim 1, wherein theprotective material has a thickness greater than or equal to 0.1nanometers and less than or equal to 5.0 nanometers.
 3. The method ofclaim 1, wherein the removing comprises one or more etch processes. 4.The method of claim 3, wherein the one or more etch processes compriseone or more plasma trim processes.
 5. The method of claim 1, wherein thedepositing comprises a first oblique deposition process in a firstdirection to deposit a first protective material and a second obliquedeposition process in a second direction to deposit a second protectivematerial.
 6. The method of claim 5, wherein the first protectivematerial and the second protective material are a same material.
 7. Themethod of claim 5, wherein the first protective material and the secondprotective material are different materials from each other or comprisecombinations of materials.
 8. The method of claim 5, wherein the firstprotective material and the second protective material each comprises atleast one of an organic material, oxide, nitride, carbon, silicon, SiO,SiN, SiON, Sn, SnO, Ti, TiO, TiN, Ta, TaN, Al, AlO, Zr, ZrO Hf, HfO, W,or WC.
 9. The method of claim 1, wherein the one or more obliquedeposition processes comprise one or more oblique physical vapordeposition (PVD) processes.
 10. The method of claim 9, wherein the oneor more oblique PVD processes apply the protective material at angles ofincidence of 10 to 80 degrees with respect to a horizontal surface of anext underlying layer.
 11. The method of claim 9, wherein the one ormore oblique PVD processes are used to deposit protective materialsimultaneously in two different directions.
 12. The method of claim 9,wherein a first set of oblique PVD processes is used to depositprotective material in a first direction using one or more angles and asecond set of oblique PVD processes using one or more angles is used todeposit protective material in a second direction.
 13. The method ofclaim 12, wherein oblique PVD processes from the first set arealternated with oblique PVD processes from the second set.
 14. Themethod of claim 9, wherein a plurality of oblique PVD processes are usedhaving a same process chemistry or different process chemistries. 15.The method of claim 9, wherein a plurality of oblique PVD processes areusing having a same target material or different target materials. 16.The method of claim 1, wherein the one or more material bridges haveheights lower than heights for the line patterns within the patternedlayer.
 17. The method of claim 16, wherein the heights of the one ormore material bridges above a surface of a next underlying layer uponwhich the patterned layer is formed is greater than zero and is lessthan or equal to ninety-five percent of the heights for the linepatterns above the next underlying layer.
 18. The method of claim 1,further comprising transferring a pattern of the patterned layer to atleast one underlying layer within the multilayer structure.
 19. Themethod of claim 18, wherein the multilayer structure comprises ahardmask layer formed over a substrate for the microelectronicworkpiece, and wherein the pattern is transferred to the hardmask layer.20. The method of claim 18, further comprising performing one or moreetch processes to remove the protective material before thetransferring.
 21. The method of claim 1, wherein the EUV patterningprocess comprises forming an EUV photoresist layer, exposing the EUVphotoresist layer with a pattern using EUV light, and removing unexposedportions of the EUV photoresist layer to form the patterned layer. 22.The method of claim 21, wherein the EUV photoresist layer comprises atleast one of a chemically amplified resist (CAR) material, a non-CARmaterial, a metal oxide resist (MOR) material, or combination ofmaterials.
 23. The method of claim 21, wherein the EUV light has awavelength from 6 to 16 nanometers.
 24. The method of claim 1, whereinthe multilayer structure comprises an anti-reflective coating (ARC)layer, a protective layer, and a hardmask layer formed over a substratefor the microelectronic workpiece.